Integrated Circuits (ICs)
739344 items
Quantity:
Attribute | Attribute Value |
---|---|
Mfr | Taiwan Semiconductor Corporation |
Series | - |
Package | Bulk |
Product Status | Obsolete |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60 V |
Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 48mOhm @ 8A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 22.4 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1250 pF @ 30 V |
FET Feature | - |
Power Dissipation (Max) | 27W (Tc) |
Operating Temperature | -50°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | ITO-220 |
Package / Case | TO-220-3 Full Pack, Isolated Tab |
AUIRFU4104
MOSFET N-CH 40V 42A TO251-3-21
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AUTOMOTIVE HEXFET P CHANNEL
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N-Channel 55 V 3.1A (Ta) 1W (Ta) Surface Mount SOT-223
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