Integrated Circuits (ICs)
739344 items
Quantity:
Attribute | Attribute Value |
---|---|
Mfr | Infineon Technologies |
Series | HEXFET® |
Package | Tube |
Product Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55 V |
Current - Continuous Drain (Id) @ 25°C | 42A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 8mOhm @ 42A, 10V |
Vgs(th) (Max) @ Id | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 66 nC @ 5 V |
Vgs (Max) | ±16V |
Input Capacitance (Ciss) (Max) @ Vds | 2900 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 130W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | IPAK (TO-251AA) |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
N-Channel 60 V 55A (Tc) 115W (Tc) Through Hole TO-220AB
Shipping | Use DHL Express by default |
Delivery |
Will usually ship within 3 bussiness day. |
Over 3000 USD and under 1KG
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