Integrated Circuits (ICs)
739344 items
Quantity:
Attribute | Attribute Value |
---|---|
Current - Continuous Drain (Id) @ 25°C | 47A (Tc) |
Drain to Source Voltage (Vdss) | 55 V |
Drive Voltage (Max Rds On, Min Rds On) | 4V, 10V |
FET Feature | - |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 48 nC @ 5 V |
Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 25 V |
Mfr | Infineon Technologies |
Mounting Type | Through Hole |
Operating Temperature | -55°C ~ 175°C (TJ) |
Package | Tube |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Power Dissipation (Max) | 3.8W (Ta), 110W (Tc) |
Product Status | Obsolete |
Rds On (Max) @ Id, Vgs | 22mOhm @ 25A, 10V |
Series | HEXFET® |
Supplier Device Package | TO-262 |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | ±16V |
Vgs(th) (Max) @ Id | 2V @ 250µA |
NP80N055MDG-S18-AY
MOSFET N-CH 55V 80A TO220
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AUIRFR4104TRL
AUTOMOTIVE HEXFET N CHANNEL
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AUIRFS8403TRR
MOSFET N-CH 40V 123A D2PAK
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MOSFET N-CH 40V 240A D2PAK
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N-Channel 40 V 240A (Tc) 380W (Tc) Surface Mount D2PAK (7-Lead)
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