Manufacturer:
Infineon Technologies
Description:
MV POWER MOS
Detailed Description:
N-Channel 150 V 112A (Tc) 214W (Tc) Through Hole PG-TO262-3
Product Status::
59758 In Stock
Data Sheet:
ECAD Model:
Quantity:
Attribute | Attribute Value |
---|---|
Mfr | Infineon Technologies |
Series | OptiMOS™ |
Package | Tube |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 150 V |
Current - Continuous Drain (Id) @ 25°C | 112A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 8V, 10V |
Rds On (Max) @ Id, Vgs | 7.6mOhm @ 56A, 10V |
Vgs(th) (Max) @ Id | 4.6V @ 160µA |
Gate Charge (Qg) (Max) @ Vgs | 61 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 4700 pF @ 75 V |
FET Feature | - |
Power Dissipation (Max) | 214W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO262-3 |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Base Product Number | IPI076 |
AUIRFU8403-701TRL
AUTOMOTIVE HEXFET POWER MOSFET
$0.000000 View More
AUIRF3504
AUTOMOTIVE HEXFET N CHANNEL
$0.000000 View More
AUIRFU4104
MOSFET N-CH 40V 42A TO251-3-21
$0.000000 View More
AUIRLZ44ZL
MOSFET N-CH 55V 51A TO220AB
$0.000000 View More
AUIRF9Z34N
AUTOMOTIVE HEXFET P CHANNEL
$0.000000 View More