Integrated Circuits (ICs)
739344 items
Quantity:
Attribute | Attribute Value |
---|---|
Mfr | Infineon Technologies |
Series | HEXFET® |
Package | Bag |
Product Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55 V |
Current - Continuous Drain (Id) @ 25°C | 95A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 5.3mOhm @ 95A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 180 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 5600 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 310W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247AC |
Package / Case | TO-247-3 |
AUIRL1404Z
MOSFET N-CH 40V 160A TO220
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AUIRFSL6535
MOSFET N-CH 300V 19A TO262-3-901
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N-Channel 300 V 19A (Tc) 210W (Tc) Through Hole PG-TO262-3-901
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