Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 650V 3.2A TO220-3
Detailed Description:
N-Channel 650 V 3.2A (Tc) 38W (Tc) Through Hole PG-TO220-3-1
Product Status::
46617 In Stock
Data Sheet:
ECAD Model:
Quantity:
Attribute | Attribute Value |
---|---|
Mfr | Infineon Technologies |
Series | CoolMOS™ |
Package | Tube |
Product Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 3.2A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.4Ohm @ 2A, 10V |
Vgs(th) (Max) @ Id | 3.9V @ 135µA |
Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 38W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO220-3-1 |
Package / Case | TO-220-3 |
Base Product Number | SPP03N |
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