Manufacturer:
Infineon Technologies
Description:
MOSFET P-CH 60V 9.7A TO251-3
Detailed Description:
P-Channel 60 V 9.7A (Tc) 42W (Tc) Through Hole P-TO251-3-1
Product Status::
46548 In Stock
Data Sheet:
ECAD Model:
Quantity:
Attribute | Attribute Value |
---|---|
Base Product Number | SPU09P |
Current - Continuous Drain (Id) @ 25°C | 9.7A (Tc) |
Drain to Source Voltage (Vdss) | 60 V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
FET Feature | - |
FET Type | P-Channel |
Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 450 pF @ 25 V |
Mfr | Infineon Technologies |
Mounting Type | Through Hole |
Operating Temperature | -55°C ~ 175°C (TJ) |
Package | Tube |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Power Dissipation (Max) | 42W (Tc) |
Product Status | Obsolete |
Rds On (Max) @ Id, Vgs | 250mOhm @ 6.8A, 10V |
Series | SIPMOS® |
Supplier Device Package | P-TO251-3-1 |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | ±20V |
Vgs(th) (Max) @ Id | 2V @ 250µA |