Integrated Circuits (ICs)
739344 items
Quantity:
Attribute | Attribute Value |
---|---|
Mfr | Rohm Semiconductor |
Series | - |
Package | Tube |
Product Status | Active |
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 1700 V |
Current - Continuous Drain (Id) @ 25°C | 3.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 18V |
Rds On (Max) @ Id, Vgs | 1.5Ohm @ 1.1A, 18V |
Vgs(th) (Max) @ Id | 4V @ 900µA |
Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 18 V |
Vgs (Max) | +22V, -6V |
Input Capacitance (Ciss) (Max) @ Vds | 184 pF @ 800 V |
FET Feature | - |
Power Dissipation (Max) | 35W (Tc) |
Operating Temperature | 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-3PFM |
Package / Case | TO-3PFM, SC-93-3 |
Base Product Number | SCT2H12 |
AUIRFS3607
MOSFET N-CH 75V 80A D2PAK
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IRF6618TRPBF
IRF6618 - DIRECTFET POWER MOSFET
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AUIRL3705ZSTRL
MOSFET N-CH 55V 75A D2PAK
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AUIRL1404Z
MOSFET N-CH 40V 160A TO220
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AUIRL7766M2TR
MOSFET N-CH 100V 10A DIRECTFET
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N-Channel 100 V 10A (Ta) 2.5W (Ta), 62.5W (Tc) Surface Mount DirectFET™ Isometric M4
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