Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 60V 80A TO262-3
Detailed Description:
N-Channel 60 V 80A (Tc) 79W (Tc) Through Hole PG-TO262-3-1
Product Status::
49553 In Stock
Data Sheet:
ECAD Model:
Quantity:
Attribute | Attribute Value |
---|---|
Mfr | Infineon Technologies |
Series | OptiMOS™ |
Package | Tube |
Product Status | Last Time Buy |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60 V |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 6.7mOhm @ 80A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 40µA |
Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V |
Vgs (Max) | ±16V |
Input Capacitance (Ciss) (Max) @ Vds | 5680 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 79W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO262-3-1 |
Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
Base Product Number | IPI80N06 |
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