Manufacturer:
EPC
Description:
GAN TRANS 2N-CH 120V BUMPED DIE
Detailed Description:
Mosfet Array 2 N-Channel (Dual) Common Source 120V 3.4A Surface Mount Die
Product Status::
35300 In Stock
Data Sheet:
ECAD Model:
Quantity:
Attribute | Attribute Value |
---|---|
Mfr | EPC |
Series | eGaN® |
Package | Tape & Reel (TR), Cut Tape (CT), Digi-Reel® |
Product Status | Active |
FET Type | 2 N-Channel (Dual) Common Source |
FET Feature | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) | 120V |
Current - Continuous Drain (Id) @ 25°C | 3.4A |
Rds On (Max) @ Id, Vgs | 60mOhm @ 4A, 5V |
Vgs(th) (Max) @ Id | 2.5V @ 700µA |
Gate Charge (Qg) (Max) @ Vgs | 0.8nC @ 5V |
Input Capacitance (Ciss) (Max) @ Vds | 80pF @ 60V |
Power - Max | - |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | Die |
Supplier Device Package | Die |
Base Product Number | EPC2110 |
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