Manufacturer:
Toshiba Semiconductor and Storage
Description:
MOSFET N-CH 600V 30.8A TO220
Detailed Description:
N-Channel 600 V 30.8A (Ta) 230W (Tc) Through Hole TO-220
Product Status::
6116 In Stock
Data Sheet:
ECAD Model:
Quantity:
Attribute | Attribute Value |
---|---|
Base Product Number | TK31E60 |
Current - Continuous Drain (Id) @ 25°C | 30.8A (Ta) |
Drain to Source Voltage (Vdss) | 600 V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
FET Feature | Super Junction |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 3000 pF @ 300 V |
Mfr | Toshiba Semiconductor and Storage |
Mounting Type | Through Hole |
Operating Temperature | 150°C (TJ) |
Package | Tube |
Package / Case | TO-220-3 |
Power Dissipation (Max) | 230W (Tc) |
Product Status | Active |
Rds On (Max) @ Id, Vgs | 88mOhm @ 9.4A, 10V |
Series | DTMOSIV-H |
Supplier Device Package | TO-220 |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | ±30V |
Vgs(th) (Max) @ Id | 3.5V @ 1.5mA |