Manufacturer:
Toshiba Semiconductor and Storage
Description:
MOSFET N-CH 650V 35A TO220SIS
Detailed Description:
N-Channel 650 V 35A (Ta) 50W (Tc) Through Hole TO-220SIS
Product Status::
25227 In Stock
Data Sheet:
ECAD Model:
Quantity:
Attribute | Attribute Value |
---|---|
Mfr | Toshiba Semiconductor and Storage |
Series | DTMOSIV |
Package | Tube |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 35A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 80mOhm @ 17.5A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 2.1mA |
Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 4100 pF @ 300 V |
FET Feature | - |
Power Dissipation (Max) | 50W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220SIS |
Package / Case | TO-220-3 Full Pack |
Base Product Number | TK35A65 |
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