Integrated Circuits (ICs)
739344 items
Quantity:
Attribute | Attribute Value |
---|---|
Mfr | Toshiba Semiconductor and Storage |
Series | DTMOSIV |
Package | Tube |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 35A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 80mOhm @ 17.5A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 2.1mA |
Gate Charge (Qg) (Max) @ Vgs | 100 nC @ 10 V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 4100 pF @ 300 V |
FET Feature | - |
Power Dissipation (Max) | 50W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220SIS |
Package / Case | TO-220-3 Full Pack |
Base Product Number | TK35A65 |
MTB60N10E7L
N-CHANNEL POWER MOSFET
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MMDF4N01HDR2
TRANS MOSFET N-CH 20V 5.2A 8-PIN
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MTSF2P03HDR2
MTSF2P03 - TRANS MOSFET P-CH 30V
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MTB15N06VT4
TRANS MOSFET N-CH 60V 15A 3-PIN(
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MMSF7N03HDR2
TRANS MOSFET N-CH 30V 8.2A 8-PIN
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