Integrated Circuits (ICs)
739344 items
Quantity:
Attribute | Attribute Value |
---|---|
Mfr | Toshiba Semiconductor and Storage |
Series | U-MOSVIII-H |
Package | Tube |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 80 V |
Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 12.2mOhm @ 17.5A, 10V |
Vgs(th) (Max) @ Id | 4V @ 300µA |
Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1700 pF @ 40 V |
FET Feature | - |
Power Dissipation (Max) | 30W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220SIS |
Package / Case | TO-220-3 Full Pack |
Base Product Number | TK35A08 |
AUIRLZ24NSTRL
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N-Channel 55 V 16A (Tc) 35W (Tc) Surface Mount D-Pak
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