Integrated Circuits (ICs)
739344 items
Quantity:
Attribute | Attribute Value |
---|---|
Mfr | Toshiba Semiconductor and Storage |
Series | DTMOSIV |
Package | Tube |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 13.7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 250mOhm @ 6.9A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 690µA |
Gate Charge (Qg) (Max) @ Vgs | 35 nC @ 10 V |
Vgs (Max) | ±30V |
Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 300 V |
FET Feature | - |
Power Dissipation (Max) | 40W (Tc) |
Operating Temperature | 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220SIS |
Package / Case | TO-220-3 Full Pack |
Base Product Number | TK14A65 |
AUIRF2903Z
MOSFET N-CH 30V 160A TO220AB
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AUIRFBA1405
MOSFET N-CH 55V 95A SUPER-220
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AUIRF1404ZSTRL
MOSFET N-CH 40V 160A D2PAK
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AUIRFS3607
MOSFET N-CH 75V 80A D2PAK
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IRF6618TRPBF
IRF6618 - DIRECTFET POWER MOSFET
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N-Channel 30 V 30A (Ta), 170A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MT
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