Integrated Circuits (ICs)
739344 items
Quantity:
Attribute | Attribute Value |
---|---|
Current - Continuous Drain (Id) @ 25°C | 27.4A (Tc) |
Drain to Source Voltage (Vdss) | 200 V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
FET Feature | - |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 115 nC @ 10 V |
Mfr | Microsemi Corporation |
Mounting Type | Surface Mount |
Operating Temperature | -55°C ~ 150°C (TJ) |
Package | Bulk |
Package / Case | TO-267AB |
Power Dissipation (Max) | 4W (Ta), 150W (Tc) |
Product Status | Obsolete |
Rds On (Max) @ Id, Vgs | 105mOhm @ 27.4A, 10V |
Series | Military, MIL-PRF-19500/592 |
Supplier Device Package | TO-267AB |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | ±20V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
AUIRFR2905ZTR
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AUTOMOTIVE HEXFET POWER MOSFET
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N-Channel 40 V 100A (Tc) 99W (Tc) Through Hole PG-TO251-3-901
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