Integrated Circuits (ICs)
739344 items
Quantity:
Attribute | Attribute Value |
---|---|
Mfr | Infineon Technologies |
Series | HEXFET® |
Package | Tube |
Product Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 80 V |
Current - Continuous Drain (Id) @ 25°C | 30A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 28mOhm @ 23A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 4.5 V |
Vgs (Max) | ±16V |
Input Capacitance (Ciss) (Max) @ Vds | 1890 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 120W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | D-PAK (TO-252AA) |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
AUIRL7766M2TR
MOSFET N-CH 100V 10A DIRECTFET
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AUIRF2805STRL
MOSFET N-CH 55V 135A D2PAK
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AUIRFR8405TRL
MOSFET N-CH 40V 100A DPAK
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AUIRFSL6535
MOSFET N-CH 300V 19A TO262-3-901
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IRF6616TRPBF
IRF6616 - MOSFET, 40V, 106A, 5.0
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N-Channel 40 V 19A (Ta), 106A (Tc) 2.8W (Ta), 89W (Tc) Surface Mount DIRECTFET™ MX
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