Integrated Circuits (ICs)
739344 items
Quantity:
Attribute | Attribute Value |
---|---|
Current - Continuous Drain (Id) @ 25°C | 103A (Tc) |
Drain to Source Voltage (Vdss) | 100 V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
FET Feature | - |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 150 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 5380 pF @ 25 V |
Mfr | Infineon Technologies |
Mounting Type | Surface Mount |
Operating Temperature | -55°C ~ 175°C (TJ) |
Package | Tube |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Power Dissipation (Max) | 333W (Tc) |
Product Status | Discontinued at Digi-Key |
Rds On (Max) @ Id, Vgs | 11.6mOhm @ 62A, 10V |
Series | HEXFET® |
Supplier Device Package | PG-TO263-3 |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | ±20V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
N-Channel 30 V 160A (Tc) 290W (Tc) Through Hole TO-220AB
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Delivery |
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Over 3000 USD and under 1KG
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