Integrated Circuits (ICs)
739344 items
Quantity:
Attribute | Attribute Value |
---|---|
Mfr | Infineon Technologies |
Series | HEXFET® |
Package | Tube |
Product Status | Not For New Designs |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 55 V |
Current - Continuous Drain (Id) @ 25°C | 75A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 6.5mOhm @ 66A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 3450 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 170W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220AB |
Package / Case | TO-220-3 |
Base Product Number | AUIRF3205 |
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N-Channel 55 V 18A (Tc) 3.8W (Ta), 45W (Tc) Surface Mount D2PAK
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