Integrated Circuits (ICs)
739344 items
Quantity:
Attribute | Attribute Value |
---|---|
Base Product Number | SSM6J212 |
Current - Continuous Drain (Id) @ 25°C | 4A (Ta) |
Drain to Source Voltage (Vdss) | 20 V |
Drive Voltage (Max Rds On, Min Rds On) | 1.5V, 4.5V |
FET Feature | - |
FET Type | P-Channel |
Gate Charge (Qg) (Max) @ Vgs | 14.1 nC @ 4.5 V |
Input Capacitance (Ciss) (Max) @ Vds | 970 pF @ 10 V |
Mfr | Toshiba Semiconductor and Storage |
Mounting Type | Surface Mount |
Operating Temperature | 150°C (TJ) |
Package | Tape & Reel (TR), Cut Tape (CT), Digi-Reel® |
Package / Case | SOT-563, SOT-666 |
Power Dissipation (Max) | 500mW (Ta) |
Product Status | Active |
Rds On (Max) @ Id, Vgs | 40.7mOhm @ 3A, 4.5V |
Series | U-MOSVI |
Supplier Device Package | ES6 |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | ±8V |
Vgs(th) (Max) @ Id | 1V @ 1mA |
AUIRFU8403-701TRL
AUTOMOTIVE HEXFET POWER MOSFET
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AUIRF3504
AUTOMOTIVE HEXFET N CHANNEL
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AUIRFU4104
MOSFET N-CH 40V 42A TO251-3-21
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AUIRLZ44ZL
MOSFET N-CH 55V 51A TO220AB
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AUIRF9Z34N
AUTOMOTIVE HEXFET P CHANNEL
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P-Channel 55 V 19A (Tc) 68W (Tc) Through Hole TO-220AB
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