Manufacturer:
Toshiba Semiconductor and Storage
Description:
IGBT 1000V 60A 170W TO3P LH
Detailed Description:
IGBT 1000 V 60 A 170 W Through Hole TO-3P(LH)
Product Status::
12550 In Stock
Data Sheet:
ECAD Model:
Quantity:
Attribute | Attribute Value |
---|---|
Base Product Number | GT60N321 |
Current - Collector (Ic) (Max) | 60 A |
Current - Collector Pulsed (Icm) | 120 A |
IGBT Type | - |
Input Type | Standard |
Mfr | Toshiba Semiconductor and Storage |
Mounting Type | Through Hole |
Operating Temperature | 150°C (TJ) |
Package | Tube |
Package / Case | TO-3PL |
Power - Max | 170 W |
Product Status | Obsolete |
Reverse Recovery Time (trr) | 2.5 µs |
Series | - |
Supplier Device Package | TO-3P(LH) |
Switching Energy | - |
Td (on/off) @ 25°C | 330ns/700ns |
Test Condition | - |
Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 60A |
Voltage - Collector Emitter Breakdown (Max) | 1000 V |
IRGS4064DTRLPBF
IGBT W/ULTRAFAST SOFT RECOVERY D
$0.000000 View More
IRG7PK35UD1PBF
IGBT WITH ULTRAFAST SOFT RECOVER
$0.000000 View More
IRGP30B120KD-EP
MOTOR CONTROL CO-PACK IGBT W/ULT
$0.000000 View More
IRG4BC30KDPBF
IGBT, 28A I(C), 600V V(BR)CES, N
$0.000000 View More
IRG4PH40UDPBF
IRG4PH40U - 1200V ULTRAFAST 5-40
$0.000000 View More