Manufacturer:
onsemi
Description:
SILICON CARBIDE (SIC) MOSFET - 3
Detailed Description:
N-Channel 650 V 55A (Tc) 187W (Tc) Surface Mount 4-TDFN (8x8)
Product Status::
5333 In Stock
Data Sheet:
ECAD Model:
Quantity:
Attribute | Attribute Value |
---|---|
Base Product Number | NTMT045 |
Current - Continuous Drain (Id) @ 25°C | 55A (Tc) |
Drain to Source Voltage (Vdss) | 650 V |
Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
FET Feature | - |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 105 nC @ 18 V |
Input Capacitance (Ciss) (Max) @ Vds | 1870 pF @ 325 V |
Mfr | onsemi |
Mounting Type | Surface Mount |
Operating Temperature | -55°C ~ 175°C (TJ) |
Package | Tape & Reel (TR), Cut Tape (CT), Digi-Reel® |
Package / Case | 4-PowerTSFN |
Power Dissipation (Max) | 187W (Tc) |
Product Status | Active |
Rds On (Max) @ Id, Vgs | 50mOhm @ 25A, 18V |
Series | - |
Supplier Device Package | 4-TDFN (8x8) |
Technology | SiC (Silicon Carbide Junction Transistor) |
Vgs (Max) | +22V, -8V |
Vgs(th) (Max) @ Id | 4.3V @ 8mA |