Manufacturer:
GE Aerospace
Description:
1200V 1425A SiC Half-Bridge
Detailed Description:
Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) 1.425kA (Tc) 3.75kW (Tc) Chassis Mount
Product Status::
1063 In Stock
Data Sheet:
ECAD Model:
Quantity:
Attribute | Attribute Value |
---|---|
Current - Continuous Drain (Id) @ 25°C | 1.425kA (Tc) |
Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
FET Feature | Silicon Carbide (SiC) |
FET Type | 2 N-Channel (Half Bridge) |
Gate Charge (Qg) (Max) @ Vgs | 3744nC @ 18V |
Input Capacitance (Ciss) (Max) @ Vds | 90000pF @ 600V |
Mfr | GE Aerospace |
Mounting Type | Chassis Mount |
Operating Temperature | -55°C ~ 150°C (Tc) |
Package | Bulk |
Package / Case | Module |
Power - Max | 3.75kW (Tc) |
Product Status | Active |
Rds On (Max) @ Id, Vgs | 1.5mOhm @ 475A, 20V |
Series | SiC Power |
Supplier Device Package | - |
Vgs(th) (Max) @ Id | 4.5V @ 480mA |