Integrated Circuits (ICs)
739344 items
Quantity:
Attribute | Attribute Value |
---|---|
Mfr | Rohm Semiconductor |
Series | - |
Package | Tube |
Product Status | Active |
FET Type | N-Channel |
Technology | SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss) | 750 V |
Current - Continuous Drain (Id) @ 25°C | 105A (Tj) |
Drive Voltage (Max Rds On, Min Rds On) | 18V |
Rds On (Max) @ Id, Vgs | 16.9mOhm @ 58A, 18V |
Vgs(th) (Max) @ Id | 4.8V @ 30.8mA |
Gate Charge (Qg) (Max) @ Vgs | 170 nC @ 18 V |
Vgs (Max) | +21V, -4V |
Input Capacitance (Ciss) (Max) @ Vds | 4580 pF @ 500 V |
FET Feature | - |
Power Dissipation (Max) | 312W |
Operating Temperature | 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247N |
Package / Case | TO-247-3 |
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N-Channel 40 V 240A (Tc) 380W (Tc) Surface Mount D2PAK (7-Lead)
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