Integrated Circuits (ICs)
739344 items
Quantity:
Attribute | Attribute Value |
---|---|
Current - Continuous Drain (Id) @ 25°C | 11.5A (Ta) |
Drain to Source Voltage (Vdss) | 500 V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
FET Feature | - |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 890 pF @ 300 V |
Mfr | Toshiba Semiconductor and Storage |
Mounting Type | Through Hole |
Operating Temperature | 150°C |
Package | Tube |
Package / Case | TO-220-3 Full Pack |
Power Dissipation (Max) | 35W (Tc) |
Product Status | Active |
Rds On (Max) @ Id, Vgs | 300mOhm @ 5.8A, 10V |
Series | DTMOSIV |
Supplier Device Package | TO-220SIS |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | ±30V |
Vgs(th) (Max) @ Id | 3.7V @ 600µA |
N-Channel 75 V 75A (Tc) 230W (Tc) Through Hole TO-220AB
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Delivery |
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Over 3000 USD and under 1KG
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