Integrated Circuits (ICs)
739344 items
Quantity:
Attribute | Attribute Value |
---|---|
Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
Drain to Source Voltage (Vdss) | 650 V |
Drive Voltage (Max Rds On, Min Rds On) | 18V |
FET Feature | - |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 41 nC @ 18 V |
Input Capacitance (Ciss) (Max) @ Vds | 1362 pF @ 400 V |
Mfr | Toshiba Semiconductor and Storage |
Mounting Type | Through Hole |
Operating Temperature | 175°C |
Package | Tube |
Package / Case | TO-247-3 |
Power Dissipation (Max) | 132W (Tc) |
Product Status | Active |
Rds On (Max) @ Id, Vgs | 65mOhm @ 20A, 18V |
Series | - |
Supplier Device Package | TO-247 |
Technology | SiC (Silicon Carbide Junction Transistor) |
Vgs (Max) | +25V, -10V |
Vgs(th) (Max) @ Id | 5V @ 1.6mA |
N-Channel 55 V 75A (Tc) 140W (Tc) Through Hole TO-220AB
Shipping | Use DHL Express by default |
Delivery |
Will usually ship within 3 bussiness day. |
Over 3000 USD and under 1KG
Contact us 24 hours a day
100% payment protection
Simple returns policy