Integrated Circuits (ICs)
739344 items
Quantity:
Attribute | Attribute Value |
---|---|
Mfr | Toshiba Semiconductor and Storage |
Series | - |
Package | Tube |
Product Status | Active |
FET Type | N-Channel |
Technology | SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 18V |
Rds On (Max) @ Id, Vgs | 21mOhm @ 50A, 18V |
Vgs(th) (Max) @ Id | 5V @ 11.7mA |
Gate Charge (Qg) (Max) @ Vgs | 128 nC @ 18 V |
Vgs (Max) | +25V, -10V |
Input Capacitance (Ciss) (Max) @ Vds | 4850 pF @ 400 V |
FET Feature | - |
Power Dissipation (Max) | 342W (Tc) |
Operating Temperature | 175°C |
Mounting Type | Through Hole |
Supplier Device Package | TO-247 |
Package / Case | TO-247-3 |
AUIRFR2905ZTR
MOSFET N-CH 55V 42A DPAK
$0.000000 View More
AUIRFR3504
AUTOMOTIVE HEXFET N CHANNEL
$0.000000 View More
AUIRFZ44N
AUTOMOTIVE HEXFET N CHANNEL
$0.000000 View More
AUIRFZ44V
MOSFET N-CH 60V 55A TO220AB
$0.000000 View More
AUIRFU8403-701TRL
AUTOMOTIVE HEXFET POWER MOSFET
$0.000000 View More
N-Channel 40 V 100A (Tc) 99W (Tc) Through Hole PG-TO251-3-901
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