Manufacturer:
IXYS
Description:
MOSFET
Detailed Description:
N-Channel 200 V 120A (Tc) 417W (Tc) Through Hole TO-247 (IXTH)
Product Status::
9117 In Stock
Data Sheet:
ECAD Model:
Quantity:
Attribute | Attribute Value |
---|---|
Mfr | IXYS |
Series | - |
Package | Tube |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 200 V |
Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 9.5mOhm @ 60A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 108 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 6100 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 417W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247 (IXTH) |
Package / Case | TO-247-3 |
Base Product Number | IXTH120 |