Integrated Circuits (ICs)
739344 items
Quantity:
Attribute | Attribute Value |
---|---|
Mfr | Transphorm |
Series | SuperGaN® |
Package | Tube |
Product Status | Active |
FET Type | N-Channel |
Technology | GaNFET (Gallium Nitride) |
Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 34A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 60mOhm @ 22A, 10V |
Vgs(th) (Max) @ Id | 4.8V @ 700µA |
Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 400 V |
FET Feature | - |
Power Dissipation (Max) | 119W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247-3 |
Package / Case | TO-247-3 |
Base Product Number | TP65H050 |
Shipping | Use DHL Express by default |
Delivery |
Will usually ship within 3 bussiness day. |
Over 3000 USD and under 1KG
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