Manufacturer:
Inventchip
Description:
SIC MOSFET, 1200V 50MOHM, TO-247
Detailed Description:
N-Channel 1200 V 58A (Tc) 344W (Tc) Through Hole TO-247-4
Product Status::
2608 In Stock
Data Sheet:
ECAD Model:
Quantity:
Attribute | Attribute Value |
---|---|
Current - Continuous Drain (Id) @ 25°C | 58A (Tc) |
Drain to Source Voltage (Vdss) | 1200 V |
Drive Voltage (Max Rds On, Min Rds On) | 20V |
FET Feature | - |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 120 nC @ 20 V |
Input Capacitance (Ciss) (Max) @ Vds | 2750 pF @ 800 V |
Mfr | Inventchip |
Mounting Type | Through Hole |
Operating Temperature | -55°C ~ 175°C (TJ) |
Package | Tube |
Package / Case | TO-247-4 |
Power Dissipation (Max) | 344W (Tc) |
Product Status | Active |
Rds On (Max) @ Id, Vgs | 65mOhm @ 20A, 20V |
Series | - |
Supplier Device Package | TO-247-4 |
Technology | SiCFET (Silicon Carbide) |
Vgs (Max) | +20V, -5V |
Vgs(th) (Max) @ Id | 3.2V @ 6mA |
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