Manufacturer:
Infineon Technologies
Description:
IRF6898 - 12V-300V N-CHANNEL POW
Detailed Description:
N-Channel 25 V 40A (Ta), 214A (Tc) 2.8W (Ta), 78W (Tc) Surface Mount DirectFET™ Isometric MX
Product Status::
4636 In Stock
Data Sheet:
ECAD Model:
Quantity:
Attribute | Attribute Value |
---|---|
Mfr | Infineon Technologies |
Series | HEXFET® |
Package | Bulk |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 25 V |
Current - Continuous Drain (Id) @ 25°C | 40A (Ta), 214A (Tc) |
Rds On (Max) @ Id, Vgs | 1.1mOhm @ 40A, 10V |
Vgs(th) (Max) @ Id | 2.1V @ 100µA |
Gate Charge (Qg) (Max) @ Vgs | 68 nC @ 4.5 V |
Vgs (Max) | ±16V |
Input Capacitance (Ciss) (Max) @ Vds | 5630 pF @ 13 V |
FET Feature | Schottky Diode (Body) |
Power Dissipation (Max) | 2.8W (Ta), 78W (Tc) |
Operating Temperature | -40°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | DirectFET™ Isometric MX |
Package / Case | DirectFET™ Isometric MX |