Manufacturer:
Infineon Technologies
Description:
SILICON CARBIDE MOSFET, PG-TO247
Detailed Description:
N-Channel 650 V 35A (Tc) 133W (Tc) Through Hole PG-TO247-4-3
Product Status::
1437 In Stock
Data Sheet:
ECAD Model:
Quantity:
Attribute | Attribute Value |
---|---|
Mfr | Infineon Technologies |
Series | CoolSiC™ |
Package | Tube |
Product Status | Active |
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 35A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 18V |
Rds On (Max) @ Id, Vgs | 74mOhm @ 16.7A, 18V |
Vgs(th) (Max) @ Id | 5.7V @ 5mA |
Gate Charge (Qg) (Max) @ Vgs | 28 nC @ 18 V |
Vgs (Max) | +20V, -2V |
Input Capacitance (Ciss) (Max) @ Vds | 930 pF @ 400 V |
FET Feature | - |
Power Dissipation (Max) | 133W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO247-4-3 |
Package / Case | TO-247-4 |
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