Manufacturer:
Microsemi Corporation
Description:
IGBT 1200V 41A 250W TO220
Detailed Description:
IGBT PT 1200 V 41 A 250 W Through Hole TO-220 [K]
Product Status::
9427 In Stock
Data Sheet:
ECAD Model:
Quantity:
Attribute | Attribute Value |
---|---|
Mfr | Microsemi Corporation |
Series | POWER MOS 7® |
Package | Tube |
Product Status | Obsolete |
IGBT Type | PT |
Voltage - Collector Emitter Breakdown (Max) | 1200 V |
Current - Collector (Ic) (Max) | 41 A |
Current - Collector Pulsed (Icm) | 50 A |
Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 13A |
Power - Max | 250 W |
Switching Energy | 114µJ (on), 165µJ (off) |
Input Type | Standard |
Gate Charge | 55 nC |
Td (on/off) @ 25°C | 9ns/28ns |
Test Condition | 600V, 13A, 5Ohm, 15V |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-220-3 |
Supplier Device Package | TO-220 [K] |
Base Product Number | APT13GP120 |
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