Integrated Circuits (ICs)
739344 items
Quantity:
Attribute | Attribute Value |
---|---|
Current - Continuous Drain (Id) @ 25°C | 64A (Tc) |
Drain to Source Voltage (Vdss) | 80 V |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
FET Feature | - |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 39 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 2700 pF @ 40 V |
Mfr | Toshiba Semiconductor and Storage |
Mounting Type | Through Hole |
Operating Temperature | 175°C |
Package | Tube |
Package / Case | TO-220-3 |
Power Dissipation (Max) | 87W (Tc) |
Product Status | Active |
Rds On (Max) @ Id, Vgs | 7mOhm @ 32A, 10V |
Series | U-MOSX-H |
Supplier Device Package | TO-220 |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | ±20V |
Vgs(th) (Max) @ Id | 3.5V @ 500µA |
N-Channel 55 V 42A (Tc) 110W (Tc) Surface Mount D-Pak
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Delivery |
Will usually ship within 3 bussiness day. |
Over 3000 USD and under 1KG
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