Manufacturer:
Toshiba Semiconductor and Storage
Description:
UMOS9 SOP-ADV(N) PD=170W F=1MHZ
Detailed Description:
N-Channel 60 V 136A (Tc) 800mW (Ta), 170W (Tc) Surface Mount 8-SOP Advance (5x5.75)
Product Status::
3688 In Stock
Data Sheet:
ECAD Model:
Quantity:
Attribute | Attribute Value |
---|---|
Current - Continuous Drain (Id) @ 25°C | 136A (Tc) |
Drain to Source Voltage (Vdss) | 60 V |
Drive Voltage (Max Rds On, Min Rds On) | 6.5V, 10V |
FET Feature | - |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 72 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 6100 pF @ 30 V |
Mfr | Toshiba Semiconductor and Storage |
Mounting Type | Surface Mount |
Operating Temperature | 150°C |
Package | Tape & Reel (TR), Cut Tape (CT), Digi-Reel® |
Package / Case | 8-PowerTDFN |
Power Dissipation (Max) | 800mW (Ta), 170W (Tc) |
Product Status | Active |
Rds On (Max) @ Id, Vgs | 2.3mOhm @ 50A, 10V |
Series | U-MOSVIII-H |
Supplier Device Package | 8-SOP Advance (5x5.75) |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | ±20V |
Vgs(th) (Max) @ Id | 4V @ 1mA |
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