Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 100V 209A TO247AC
Detailed Description:
N-Channel 100 V 209A (Tc) 3.8W (Ta), 556W (Tc) Through Hole PG-TO247-3
Product Status::
9398 In Stock
Data Sheet:
ECAD Model:
Quantity:
Attribute | Attribute Value |
---|---|
Mfr | Infineon Technologies |
Series | StrongIRFET™ |
Package | Tube |
Product Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100 V |
Current - Continuous Drain (Id) @ 25°C | 209A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
Rds On (Max) @ Id, Vgs | 1.28mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id | 3.8V @ 278µA |
Gate Charge (Qg) (Max) @ Vgs | 412 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 24000 pF @ 50 V |
FET Feature | - |
Power Dissipation (Max) | 3.8W (Ta), 556W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO247-3 |
Package / Case | TO-247-3 |