Integrated Circuits (ICs)
739344 items
Quantity:
Attribute | Attribute Value |
---|---|
Current - Continuous Drain (Id) @ 25°C | 209A (Tc) |
Drain to Source Voltage (Vdss) | 40 V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
FET Feature | - |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 111 nC @ 4.5 V |
Input Capacitance (Ciss) (Max) @ Vds | 6904 pF @ 25 V |
Mfr | International Rectifier |
Mounting Type | Surface Mount |
Operating Temperature | -55°C ~ 150°C (TJ) |
Package | Bulk |
Package / Case | DirectFET™ Isometric ME |
Power Dissipation (Max) | 104W (Tc) |
Product Status | Active |
Rds On (Max) @ Id, Vgs | 1.25mOhm @ 123A, 10V |
Series | HEXFET®, StrongIRFET™ |
Supplier Device Package | DirectFET™ Isometric ME |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | ±20V |
Vgs(th) (Max) @ Id | 2.5V @ 150µA |
N-Channel 55 V 95A (Tc) 330W (Tc) Through Hole SUPER-220™ (TO-273AA)
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