Integrated Circuits (ICs)
739344 items
Quantity:
Attribute | Attribute Value |
---|---|
Mfr | GeneSiC Semiconductor |
Series | G2R™ |
Package | Tube |
Product Status | Active |
FET Type | N-Channel |
Technology | SiC (Silicon Carbide Junction Transistor) |
Drain to Source Voltage (Vdss) | 1700 V |
Current - Continuous Drain (Id) @ 25°C | 5A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 20V |
Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2A, 20V |
Vgs(th) (Max) @ Id | 5.5V @ 500µA |
Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 20 V |
Vgs (Max) | +25V, -10V |
Input Capacitance (Ciss) (Max) @ Vds | 111 pF @ 1000 V |
FET Feature | - |
Power Dissipation (Max) | 44W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247-3 |
Package / Case | TO-247-3 |
Base Product Number | G2R1000 |
AUIRF9Z34N
AUTOMOTIVE HEXFET P CHANNEL
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AUTOMOTIVE HEXFET POWER MOSFET
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AUIRLL024NTR-IR
AUTOMOTIVE POWER MOSFET
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AUIRLR024N
AUTOMOTIVE HEXFET N-CHANNEL
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AUIRLR024NTRL
MOSFET N-CH 55V 17A DPAK
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N-Channel 55 V 17A (Tc) 45W (Tc) Surface Mount D-Pak
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