Integrated Circuits (ICs)
739344 items
Quantity:
Attribute | Attribute Value |
---|---|
Mfr | GeneSiC Semiconductor |
Series | G3R™ |
Package | Tube |
Product Status | Active |
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 1700 V |
Current - Continuous Drain (Id) @ 25°C | 61A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 15V |
Rds On (Max) @ Id, Vgs | 58mOhm @ 40A, 15V |
Vgs(th) (Max) @ Id | 2.7V @ 8mA |
Gate Charge (Qg) (Max) @ Vgs | 182 nC @ 15 V |
Vgs (Max) | ±15V |
Input Capacitance (Ciss) (Max) @ Vds | 4523 pF @ 1000 V |
FET Feature | - |
Power Dissipation (Max) | 438W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247-3 |
Package / Case | TO-247-3 |
Base Product Number | G3R45 |
N-Channel 55 V 150A (Tc) 230W (Tc) Through Hole TO-262
Shipping | Use DHL Express by default |
Delivery |
Will usually ship within 3 bussiness day. |
Over 3000 USD and under 1KG
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