Integrated Circuits (ICs)
739344 items
Quantity:
Attribute | Attribute Value |
---|---|
Mfr | GeneSiC Semiconductor |
Series | G2R™ |
Package | Tube |
Product Status | Active |
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 1700 V |
Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 20V |
Rds On (Max) @ Id, Vgs | 1.2Ohm @ 2A, 20V |
Vgs(th) (Max) @ Id | 4V @ 2mA |
Vgs (Max) | +20V, -10V |
Input Capacitance (Ciss) (Max) @ Vds | 139 pF @ 1000 V |
FET Feature | - |
Power Dissipation (Max) | 54W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | TO-263-7 |
Package / Case | TO-263-8, D²Pak (7 Leads + Tab), TO-263CA |
Base Product Number | G2R1000 |
AUIRF3710ZSTRR
MOSFET N-CH 100V 59A D2PAK
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AUIRFS8405TRL
MOSFET N-CH 40V 120A D2PAK
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AUIRLR3410TR
AUTOMOTIVE HEXFET N-CHANNEL POWE
$0.000000 View More
AUIRFR8405
MOSFET N-CH 40V 100A DPAK
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AUIRFZ24NSTRL
MOSFET N-CH 55V 17A DPAK
$0.000000 View More
N-Channel 55 V 17A (Tc) 3.8W (Ta), 45W (Tc) Surface Mount D-PAK (TO-252AA)
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