Integrated Circuits (ICs)
739344 items
Quantity:
Attribute | Attribute Value |
---|---|
Mfr | Toshiba Semiconductor and Storage |
Series | - |
Package | Tube |
Product Status | Active |
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 1200 V |
Current - Continuous Drain (Id) @ 25°C | 36A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 20V |
Rds On (Max) @ Id, Vgs | 90mOhm @ 18A, 20V |
Vgs(th) (Max) @ Id | 5.8V @ 20mA |
Gate Charge (Qg) (Max) @ Vgs | 67 nC @ 20 V |
Vgs (Max) | ±25V, -10V |
Input Capacitance (Ciss) (Max) @ Vds | 1680 pF @ 800 V |
FET Feature | Standard |
Power Dissipation (Max) | 272W (Tc) |
Operating Temperature | -55°C ~ 175°C |
Mounting Type | Through Hole |
Supplier Device Package | TO-3P(N) |
Package / Case | TO-3P-3, SC-65-3 |
Base Product Number | TW070J120 |
AUIRFZ44V
MOSFET N-CH 60V 55A TO220AB
$0.000000 View More
AUIRFU8403-701TRL
AUTOMOTIVE HEXFET POWER MOSFET
$0.000000 View More
AUIRF3504
AUTOMOTIVE HEXFET N CHANNEL
$0.000000 View More
AUIRFU4104
MOSFET N-CH 40V 42A TO251-3-21
$0.000000 View More
AUIRLZ44ZL
MOSFET N-CH 55V 51A TO220AB
$0.000000 View More
N-Channel 55 V 51A (Tc) 80W (Tc) Through Hole TO-220AB
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