Integrated Circuits (ICs)
739344 items
Quantity:
Attribute | Attribute Value |
---|---|
Mfr | Infineon Technologies |
Series | HEXFET® |
Package | Bulk |
Product Status | Active |
FET Type | P-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 30 V |
Current - Continuous Drain (Id) @ 25°C | 3.8A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
Rds On (Max) @ Id, Vgs | 98mOhm @ 3.8A, 10V |
Vgs(th) (Max) @ Id | 2.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 511 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 2W (Ta) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | Micro6™(TSOP-6) |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
AUIRFU8403-701TRL
AUTOMOTIVE HEXFET POWER MOSFET
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MOSFET N-CH 55V 51A TO220AB
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AUIRF9Z34N
AUTOMOTIVE HEXFET P CHANNEL
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P-Channel 55 V 19A (Tc) 68W (Tc) Through Hole TO-220AB
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