Integrated Circuits (ICs)
739344 items
Quantity:
Attribute | Attribute Value |
---|---|
Current - Continuous Drain (Id) @ 25°C | 660mA (Ta) |
Drain to Source Voltage (Vdss) | 200 V |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
FET Feature | - |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 16.1 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 357 pF @ 25 V |
Mfr | Infineon Technologies |
Mounting Type | Surface Mount |
Operating Temperature | -55°C ~ 150°C (TJ) |
Package | Bulk |
Package / Case | TO-261-4, TO-261AA |
Power Dissipation (Max) | 1.8W (Ta) |
Product Status | Active |
Rds On (Max) @ Id, Vgs | 1.8Ohm @ 660mA, 10V |
Series | SIPMOS® |
Supplier Device Package | PG-SOT223-4-21 |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | ±20V |
Vgs(th) (Max) @ Id | 1.8V @ 400µA |
N-Channel 55 V 75A (Tc) 140W (Tc) Through Hole TO-220AB
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Delivery |
Will usually ship within 3 bussiness day. |
Over 3000 USD and under 1KG
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