Manufacturer:
Infineon Technologies
Description:
N-CHANNEL POWER MOSFET
Detailed Description:
N-Channel 50 V 58A (Tc) 170W Through Hole PG-TO218-3-1
Product Status::
9433 In Stock
Data Sheet:
ECAD Model:
Quantity:
Attribute | Attribute Value |
---|---|
Mfr | Infineon Technologies |
Series | Automotive, AEC-Q101 |
Package | Bulk |
Product Status | Obsolete |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 50 V |
Current - Continuous Drain (Id) @ 25°C | 58A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 18mOhm @ 47A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 1mA |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 4300 pF @ 25 V |
FET Feature | - |
Power Dissipation (Max) | 170W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | PG-TO218-3-1 |
Package / Case | TO-218-3 |
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