Manufacturer:
Toshiba Semiconductor and Storage
Description:
MOSFET N-CH 650V 38A TO247
Detailed Description:
N-Channel 650 V 38A (Ta) 270W (Tc) Through Hole TO-247
Product Status::
625 In Stock
Data Sheet:
ECAD Model:
Quantity:
Attribute | Attribute Value |
---|---|
Base Product Number | TK065N65 |
Current - Continuous Drain (Id) @ 25°C | 38A (Ta) |
Drain to Source Voltage (Vdss) | 650 V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
FET Feature | - |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 3650 pF @ 300 V |
Mfr | Toshiba Semiconductor and Storage |
Mounting Type | Through Hole |
Operating Temperature | 150°C |
Package | Tube |
Package / Case | TO-247-3 |
Power Dissipation (Max) | 270W (Tc) |
Product Status | Active |
Rds On (Max) @ Id, Vgs | 65mOhm @ 19A, 10V |
Series | DTMOSVI |
Supplier Device Package | TO-247 |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | ±30V |
Vgs(th) (Max) @ Id | 4V @ 1.69mA |
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