Manufacturer:
Vishay Siliconix
Description:
MOSFET N-CH 200V 600MA 4DIP
Detailed Description:
N-Channel 200 V 600mA (Ta) 1W (Ta) Through Hole 4-HVMDIP
Product Status::
1082 In Stock
Data Sheet:
ECAD Model:
Quantity:
Attribute | Attribute Value |
---|---|
Base Product Number | IRFD210 |
Current - Continuous Drain (Id) @ 25°C | 600mA (Ta) |
Drain to Source Voltage (Vdss) | 200 V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
FET Feature | - |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 10 V |
Input Capacitance (Ciss) (Max) @ Vds | 140 pF @ 25 V |
Mfr | Vishay Siliconix |
Mounting Type | Through Hole |
Operating Temperature | -55°C ~ 150°C (TJ) |
Package | Tube |
Package / Case | 4-DIP (0.300", 7.62mm) |
Power Dissipation (Max) | 1W (Ta) |
Product Status | Obsolete |
Rds On (Max) @ Id, Vgs | 1.5Ohm @ 360mA, 10V |
Series | - |
Supplier Device Package | 4-HVMDIP |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | ±20V |
Vgs(th) (Max) @ Id | 4V @ 250µA |